FLX257XV Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – GaAs FET & HEMT Chips

FEATURES
• High Output Power: P1dB = 33.5dBm(Typ.)
• High Gain: G1dB = 7.5dB(Typ.)
• High PAE: η_add = 31%(Typ.)
• Proven Reliability
DESCRIPTION
The FLX257XV chip is a power GaAs FET that is
designed for general purpose applications in the X-Band
frequency range as it provides superior power, gain, and
efficiency.
FLX257XV
GaAs FET & HEMT Chips
Drain
Drain
Drain
95
40
(Unit: µm)
Drain
Gate
Gate
Gate
Eudyna’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
Ptot
Tstg
Tch
Tc = 25°C
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with
gate resistance of 200Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
15.0
-65 to +175
175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 1000 1500
Transconductance
gm VDS = 5V, IDS = 600mA
- 600 ^-
Pinch-off Voltage
Vp VDS = 5V, IDS = 50mA -1.0 -2.0 -3.5
Gate Source Breakdown Voltage VGSO _{IGS = -50µA}
-5
-
-
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
P1dB
G1dB
VDS = 10V
IDS ≈ 0.6IDSS
f = 10GHz
32.5 33.5 -
6.5 7.5 ^-
Power-added Efficiency
η_add
-
31
-
Thermal Resistance
Rth _{Channel to Case}
-
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
8 10
Unit
V
V
W
°C
°C
Unit
mA
mS
V
V
dBm
dB
%
°C/W
Edition 1.4
October 2004
1