FLU35XM Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – L-Band Medium & High Power GaAs FET

FEATURES
• High Output Power: P1dB=35.5dBm (Typ.)
• High Gain: G1dB=12.5dB (Typ.)
• High PAE: η_add=46% (Typ.)
• Hermetic Metal/Ceramic (SMT) Package
• Tape and Reel Available
FLU35XM
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLU35XM is a GaAs FET designed for base station applications in the
PCN/PCS frequency range. This is a new product series that uses a surface
mount package that has been optimized for high volume cost driven applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT
Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain - source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 19.4 and -2.0 mA respectively with
gate resistance of 100Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
15
-65 to +175
+175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max.
Unit
Drain Current
I_DSS
V_DS = 5V, V_GS=0V
- 1200 1800
mA
Transconductance
gm
V_DS = 5V, I_DS=800mA
- 600 ^-
mS
Pinch-Off Voltage
V_p
V_DS = 5V, I_DS=60mA
-1.0 -2.0 -3.5
V
Gate-Source Breakdown Voltage V_GSO I_GS = -60µA
-5
-
-
V
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Power Added Efficiency
P_1dB
G_1dB
η_add
V_DS = 10V
f=2.0 GHz
I_DS=0.6I_DSS
Thermal Resistance
R_th
Channel to Case
Case Style: XM
Note: The RF parameters are measured on a lot basis by sample testing
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
34.5
11.5
-
-
35.5 -
dBm
12.5 -
dB
46 -
%
7.5 10
°C/W
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
1