FLU10ZM Datasheet, PDF (1/8 Pages) Eudyna Devices Inc – L-Band Medium & High Power GaAs FET

FLU10ZM
FEATURES
・High Output Power: P1dB=29.5dBm(typ.)
・High Gain: G1dB=13.0dB(typ.)
・Low Cost Plastic(SMT) Package
・Tape and Reel Available
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLU10ZM is a GaAs FET designed for base station and CPE
applications. This is a new product series using a plastic surface mount
package that has been optimized for high volume cost driven applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Soutce Voltage
VGS
-5
V
Total Power Dissipation
PT
6.9
W
Storage Temperature
Tstg
-55 to +150
℃
Channel Temperature
TCH
175
℃
Recommended Operating Condition (Case Temperature Tc=25℃)
Item
DC Input Voltage
Symbol
VDS
Condition
Unit
≤ 10
V
Channel Temperature
Tch
≤ 145
℃
Forward Gate Current
Igsf
≤ 4.8
mA
Reverse Gate Current
Igsr
≥-0.5
mA
Gate Resistance
Rg
400
Ω
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃)
Item
Drain Current
Transconductance
Pinch-off Voltage
Symbol
IDSS
gm
Vp
Test Conditions
VDS=5V, VGS=0V
VDS=5V, IDS=200mA
VDS=5V, IDS=15mA
Min.
-
-
-1.0
Gate-Source Breakdown
VGSO
IGS=-15uA
-5
Voltage
Limit
Typ.
300
150
-2.0
-
Max. ^Unit
450 mA
-
mS
-3.5
V
-
V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS=10V,
f=2.0GHz,
IDS=0.6IDSS(Typ.)
28.5 29.5
-
dBm
12.0 13.0
-
dB
Thermal Resistance
Rth
Channel to Case
-
15
18
℃/W
CASE STYLE: ZM
G.C.P.:Gain Compression Point
Note 1: Product supplied to this specification are 100% DC performance tested.
Note 2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.
Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.
ESD
Class Ⅱ
500～ 1999 V
Note : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5kΩ)
Edition 1.1
May 2003
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