FLM7785-45F Datasheet, PDF (1/5 Pages) Eudyna Devices Inc – C-Band Internally Matched FET

FLM7785-45F
FEATURES
・High Output Power: P1dB=46.5dBm(Typ.)
・High Gain: G1dB=7.0dB(Typ.)
・High PAE: ηadd=32.5%(Typ.)
・Broad Band: 7.7~8.5GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM7785-45F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^OC)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
P_T
Storage Temperature
Tstg
115
W
-65 to +175
O_C
Channel Temperature
Tch
175
O_C
RECOMMENDED OPERATING COMDITION (Case Temperature Tc=25^OC)
Item
Symbol
Condition
Limit
DC Input Voltage
VDS
≤10
Forward Gate Current
IGF
RG=10Ω
≤52
Reverse Gate Current
IGR
RG=10Ω
≥-23.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^OC)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
ηadd
Test Conditions
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
VDS=5V, IDS=960mA
IGS=-960uA
VDS=10V
f=7.7 - 8.5 GHz
IDS(DC)=8.0A(typ.)
Zs=ZL=50Ω
Min.
-
-
-0.5
-5.0
46.0
6.0
-
-
Limit
Typ.
24
16
-1.5
-
46.5
7.0
11　
32.5
Max.
-
-
-3.0
-
-
-
13
-
Unit
A
S
V
V
dBm
dB
A
%
Gain Flatness
∆G
-
-
1.6
dB
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IK
Rth
∆Tch
Channel to Case
10V x Ids(DC) x Rth
-
1.1
1.3
O_C/W
-
-
100
O_C
G.C.P.:Gain Compression Point
ESD
Class III
2000V　~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.3
September 2004
1