FLM5359-35F Datasheet, PDF (1/5 Pages) Eudyna Devices Inc – C-Band Internally Matched FET

FLM5359-35F
FEATURES
・High Output Power: P1dB=45.5dBm(Typ.)
・High Gain: G1dB=9.0dB(Typ.)
・High PAE: ηadd=35%(Typ.)
・Broad Band: 5.3~5.9GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM5359-35F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Rating
Unit
15
V
-5
V
Total Power Dissipation
PT
Storage Temperature
Tstg
115.4
W
-65 to +175
o_C
Channel Temperature
Tch
175
o_C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25^°C)
Item
Symbol
Condition
Limit
Unit
DC Input Voltage
V DS
≤ 10
V
Forward Gate Current
IGF
RG=13Ω
≤107.2
mA
Reverse Gate Current
IGR
R G=13Ω
≥ -23.2
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^°C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P .
Symbol
IDSS
gm
Vp
V GSO
P1dB
Test Conditions
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
VDS=5V, IDS=960mA
IGS =-960µA
Min .
-
-
-1.0
-5.0
45.0
Limit
Typ.
16.0
8000
-2.0
-
45.5
Max.
24.0
-
-3.5
-
-
Unit
A
mS
V
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-Added Efficiency
Gain Flatness
G1dB
Idsr
η_add
∆G
V_{DS =10V}
f=5.3 - 5.9 GHz
I^DS=0.5Idss (Typ.)
Zs=ZL=50Ω
8.0
9.0
-
dB
-
8.5
9.5
A
-
35
-
%
-
-
1.2
dB
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IK
Rth
∆ T ch
Channel to Case
-
1.1
1.3
o_C/W
10V X Idsr X Rth
-
-
100
o_C
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
ESD
Class Ⅲ
2000V　~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.3
September 2004
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