FLM5359-18F Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – C-Band Internally Matched FET

FLM5359-18F
FEATURES
• High Output Power: P1dB = 43.0dBm (Typ.)
• High Gain: G1dB = 8.5dB (Typ.)
• High PAE: η_add = 35% (Typ.)
• Low IM3 = -46dBc@Po = 32.0dBm
• Broad Band: 5.3 ~ 5.9GHz
• Impedance Matched Zin/Zout = 50Ω
C-Band Internally Matched FET
DESCRIPTION
The FLM5359-18F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
83.3
W
Storage Temperature
Tstg
Channel Temperature
Tch
-65 to +175
°C
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.0 and -11.6 mA respectively with
gate resistance of 25Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
IDSS
gm
Vp
VGSO
P1dB
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 4800mA
VDS = 5V, IDS = 480mA
IGS = -480µA
Min.
-
-
-1.0
-5.0
42.0
Limit
Typ. Max.
9.0 13.5
4000 ^-
-2.0 -3.5
-
-
43.0 -
Unit
A
mS
V
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
G1dB VDS =10V,
7.5 8.5 -
dB
Idsr
IDS = 0.55 IDSS _(Typ.),
f = 5.3 ~ 5.9 GHz,
- 4800 6000
mA
η_{add ZS=ZL= 50 ohm}
- 35 -
%
∆G
-
- ±0.6
dB
3rd Order Intermodulation
Distortion
f = 5.9 GHz, ∆f = 10 MHz
IM3 ^{2-Tone Test}
-44 -46 -
dBc
Pout = 32.0dBm S.C.L.
Thermal Resistance
Rth _{Channel to Case}
- 1.6 1.8
°C/W
Channel Temperature Rise
CASE STYLE: IK
∆Tch
10V x Idsr x Rth
-
- 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.3
August 2004
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