FLM4450-45F Datasheet, PDF (1/5 Pages) Eudyna Devices Inc – C-Band Internally Matched FET

FLM4450-45F
FEATURES
・High Output Power: P1dB=46.5dBm(Typ.)
・High Gain: G1dB=10.0dB(Typ.)
・High PAE: ηadd=41%(Typ.)
・Broad Band: 4.4~5.0GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM4450-45F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^°C)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
115.4
W
Storage Temperature
Tstg
-65 to +175
o_C
Channel Temperature
Tch
175
o_C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25^°C)
Item
Symbol
Condition
Limit
DC Input Voltage
V DS
≤ 12
Forward Gate Current
Reverse Gate Current
IGF
RG=13_Ω
IGR
RG=13_Ω
≤ 107.2
≥ -23.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^°C)
Item
Symbol
Test Conditions
Limit
Min . Typ.
Max. ^Unit
Drain Current
IDSS
VDS=5V, VGS =0V
-
16.0 24.0
A
Transconductance
gm
VDS=5V, IDS=8.0A
-
8000
-
mS
Pinch-off Voltage
Vp
VDS =5V, IDS=960mA
-1.0 -2.0 -3.5
V
Gate-Source Breakdown Voltage
V GSO
IGS=-960µA
-5.0
-
-
V
Output Power at 1dB G.C.P .
Power Gain at 1dB G.C.P.
Drain Current
P1dB
G1dB
Idsr
V DS =12V
f=4.4 - 5.0 GHz
IDS=7.0A (Typ.)
Zs=Z L=50Ω
46 46.5
-
9.0 10.0
-
-
8.0 10.0
dBm
dB
A
Power-Added Efficiency
ηadd
-
41
-
%
Gain Flatness
∆G
-
-
1.2
dB
Thermal Resistance
Rth
Channel to Case
-
1.1
1.3
o_C/W
Channel Temperature Rise
∆ Tch
12V X Idsr X Rth
-
-
100
o_C
CASE STYLE: IK
G.C.P.:Gain Compression Point
ESD
Class Ⅲ
2000V　~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.3
September 2004
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