FLM4450-18F Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – C-Band Internally Matched FET

FLM4450-18F
FEATURES
• High Output Power: P1dB = 43.0dBm (Typ.)
• High Gain: G1dB = 9.5dB (Typ.)
• High PAE: η_add = 36% (Typ.)
• Low IM3 = -46dBc@Po = 32.0dBm
• Broad Band: 4.4 ~ 5.0 GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM4450-18F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
15
V
-5
V
Total Power Dissipation
PT
Tc = 25°C
83.3
W
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.0 and -11.6 mA respectively with
gate resistance of 25Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Symbol
IDSS
gm
Vp
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 4800mA
VDS = 5V, IDS = 480mA
Min.
-
-
-1.0
Limit
Typ. Max.
9.0 13.5
4000 -
-2.0 -3.5
Gate Source Breakdown Voltage VGSO _{IGS = -480µA}
Output Power at 1dB G.C.P.
P1dB
-5.0 -
-
42.0 43.0 -
°C
°C
Unit
A
mS
V
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
G1dB ^{VDS =10V,}
8.5 9.5 -
dB
IDS = 0.55 IDSS _(Typ.),
Idsr _{f = 4.4 ~ 5.0 GHz,}
- 4800 6000
mA
η_add ^{ZS=ZL= 50 ohm}
-
36 -
%
Gain Flatness
3rd Order Intermodulation
Distortion
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IK
∆G
IM3
Rth
∆Tch
-
f = 5.0 GHz, ∆f = 10 MHz
2-Tone Test
-44
Pout = 32.0dBm S.C.L.
Channel to Case
-
- ±0.6
-46 -
1.6 1.8
dB
dBc
°C/W
10V x Idsr x Rth
-
- 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.3
August 2004
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