FLM4450-12F Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – C-Band Internally Matched FET

FLM4450-12F
FEATURES
• High Output Power: P1dB = 41.5dBm (Typ.)
• High Gain: G1dB = 10.5dB (Typ.)
• High PAE: η_add = 39% (Typ.)
• Low IM3 = -46dBc@Po = 30.5dBm
• Broad Band: 4.4 ~ 5.0GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM4450-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
57.6
W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with
gate resistance of 50Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Unit
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 5800 8700
mA
Transconductance
gm VDS = 5V, IDS = 3400mA - 2900 -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 300mA -1.0 -2.0 -3.5
V
Gate Source Breakdown Voltage VGSO _{IGS = -300µA}
Output Power at 1dB G.C.P.
P1dB
-5.0 -
-
40.5 41.5 -
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
G1dB ^{VDS =10V,}
9.5 10.5 -
dB
IDS = 0.55 IDSS _(Typ.),
Idsr _{f = 4.4 ~ 5.0 GHz,}
- 3250 3800
mA
η_add ^{ZS=ZL= 50 ohm}
-
39 -
%
Gain Flatness
∆G
-
- ±0.6
dB
3rd Order Intermodulation
Distortion
Thermal Resistance
f = 5.0 GHz, ∆f = 10 MHz
IM3 _{2-Tone Test}
-44 -46 -
Pout = 30.5dBm S.C.L.
Rth _{Channel to Case}
- 2.3 2.6
dBc
°C/W
Channel Temperature Rise
∆Tch _{10V x Idsr x Rth}
-
- 80
°C
CASE STYLE: IK
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.3
August 2004
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