FLM3439-8F Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – C-Band Internally Matched FET

FLM3439-8F
FEATURES
• High Output Power: P1dB = 39.5dBm (Typ.)
• High Gain: G1dB = 11.0dB (Typ.)
• High PAE: η_add = 37% (Typ.)
• Low IM3 = -46dBc@Po = 28.5dBm
• Broad Band: 3.4 ~ 3.9GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM3439-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
15
V
-5
V
Total Power Dissipation
PT
Tc = 25°C
42.8
W
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Symbol
IDSS
gm
Vp
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 2200mA
VDS = 5V, IDS = 180mA
Min.
-
-
-1.0
Limit
Typ. Max.
3900 5850
2000 ^-
-2.0 -3.5
Gate Source Breakdown Voltage VGSO _{IGS = -180µA}
Output Power at 1dB G.C.P.
P1dB
-5.0 -
-
38.5 39.5 -
°C
°C
Unit
mA
mS
V
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
G1dB VDS =10V,
10.0 11.0 -
dB
Idsr
IDS = 0.55 IDSS _(Typ.),
f = 3.4 ~ 3.9 GHz,
- 2200 2600
mA
η_{add ZS=ZL= 50 ohm}
-
40
-
%
∆G
-
- ±0.6
dB
3rd Order Intermodulation
Distortion
f = 3.9 GHz, ∆f = 10 MHz
IM3 ^{2-Tone Test}
-44 -46 -
dBc
Pout = 28.5dBm S.C.L.
Thermal Resistance
Rth _{Channel to Case}
- 3.0 3.5
°C/W
Channel Temperature Rise
CASE STYLE: IB
∆Tch
10V x Idsr x Rth
-
- 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1
August 2004
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