FLM1414-6F Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – X, Ku-Band Internally Matched FET

FLM1414-6F
X, Ku-Band Internally Matched FET
FEATURES
• High Output Power: P1dB = 37.5dBm (Typ.)
• High Gain: G1dB = 6.5dB (Typ.)
• High PAE: η_add = 26% (Typ.)
• Low IM3 = -46dBc@Po = 26.5dBm (Typ.)
• Broad Band: 14.0 ~ 14.5GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
DESCRIPTION
The FLM1414-6F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
Gate-Source Voltage
VGS
-5
Total Power Dissipation
PT
Tc = 25°C
31.2
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.0 and -2.8 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 2800 4200
Transconductance
gm VDS = 5V, IDS = 1800mA - 2350 -
Pinch-off Voltage
Vp VDS = 5V, IDS = 120mA -0.5 -1.5 -3.0
Gate Source Breakdown Voltage VGSO _{IGS = -120µA}
-5.0 -
-
Output Power at 1dB G.C.P.
P1dB
36.5 37.5 -
Power Gain at 1dB G.C.P.
Drain Current
Power-Added Efficiency
G1dB
Idsr
η_add
VDS = 10V,
IDS = 0.6 IDSS(Typ.),
f = 14.0 ~ 14.5 GHz,
ZS = ZL = 50Ω
6.0 6.5 -
- 1800 2100
- 24 -
V
V
W
°C
°C
Unit
mA
mS
V
V
dBm
dB
mA
%
Gain Flatness
3rd Order Intermodulation
Distortion
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IA
∆_G
IM3
Rth
∆Tch
-
- ±0.6
dB
f = 14.5GHz, ∆f = 10MHz
2-Tone Test
-44 -46 -
dBc
Pout = 26.5dBm S.C.L.
Channel to Case
- 4.0 4.5
°C/W
10V x Idsr x Rth
-
- 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.5
August 2004
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