FLM1414-4F Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – Internally Matched Power GaAs FET

FLM1414-4F
FEATURES
• High Output Power: P1dB = 36.0dBm (Typ.)
• High Gain: G1dB = 6.0dB (Typ.)
• High PAE: η_add = 27% (Typ.)
• Low IM3 = -46dBc@Po = 25.5dBm (Typ.)
• Broad Band: 14.0 ~ 14.5GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
Internally Matched Power GaAs FET
DESCRIPTION
The FLM1414-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
25
W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 1700 2600
mA
Transconductance
gm VDS = 5V, IDS = 1100mA - 1700 -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 85mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO _{IGS = -85µA}
-5.0 -
-
V
Output Power at 1dB G.C.P.
P1dB
35.5 36.0 -
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-Added Efficiency
G1dB VDS = 10V
5.0 6.0 -
dB
f = 14.0 ~ 14.5 GHz
Idsr _{IDS = 0.65 IDSS(Typ.)}
- 1100 1300
mA
η_add ZS = ZL = 50Ω
-
27
-
%
Gain Flatness
∆_G
-
- ±0.6
dB
3rd Order Intermodulation
Distortion
Thermal Resistance
f = 14.5GHz, ∆f = 10MHz
IM3 2-Tone Test
-44 -46 -
Pout = 25.5dBm S.C.L.
Rth _{Channel to Case}
- 5.0 6.0
dBc
°C/W
Channel Temperature Rise
CASE STYLE: IA
∆Tch _{10V x Idsr x Rth}
-
- 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.2
August 2004
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