FLM1414-15F Datasheet, PDF (1/5 Pages) Eudyna Devices Inc – X,Ku-Band Internally Matched FET

FLM1414-15F
FEATURES
・High Output Power: P1dB=42.0dBm(Typ.)
・High Gain: G1dB=6.0dB(Typ.)
・High PAE: ηadd=26%(Typ.)
・Broad Band: 14.0～14.5GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
X,Ku-Band Internally Matched FET
DESCRIPTION
The FLM1414-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^oC)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
75
W
Storage Temperature
Tstg
-65 to +175
o_C
Channel Temperature
Tch
175
o_C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25^oC)
Item
Symbol
Condition
Limit
DC Input Voltage
VDS
≦10
Forward Gate Current
IGF
RG=50Ω
≦48
Reverse Gate Current
IGR
RG=50Ω
≧-6.6
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)
Item
Symbol
Test Conditions
Limit
Min. Typ.
Max. ^Unit
Drain Current
IDSS
VDS=5V , VGS=0V
-
7.2
10.0
A
Transconductance
gm
VDS=5V , IDS=3600mA
-
6700
-
mS
Pinch-off Voltage
Vp
VDS=5V , IDS=300mA
-0.5
-1.5
-3.0
V
Gate-Source Breakdown Voltage
VGSO
IGS=-340µA
-5.0
-
-
V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
P1dB
G1dB
Idsr
ηadd
VDS=10V
f=14.0 - 14.5 GHz
IDS=0.6IDSS(typ)
Zs=ZL=50Ω
41.5 42.0
5.0
6.0
-
4200
-
26
-
-
5000
-
dBm
dB
mA
%
Gain Flatness
∆G
-
-
1.2
dB
3rd Order Intermodulation
Distortion
IM3
f=14.5 GHz
-42.0 -45.0
-
dBc
Δf=10MHz,2-Tone Test
Pout=30.0dBm(S.C.L.)
Thermal Resistance
Rth
Channel to Case
-
1.8
2.0
o_{C /W}
Channel Temperature Rise
∆ Tch
10V x Idsr X Rth
-
-
80
o_C
CASE STYLE: IB
G.C.P.:Gain Compression Point , S.C.L.:Single Carrier Level
ESD
Class III
2000V~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.4
May 2004
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