FLM1414-12F Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – X, Ku-Band Internally Matched FET

FEATURES
• High Output Power: P1dB = 40.5dBm (Typ.)
• High Gain: G1dB = 5.0dB (Typ.)
• High PAE: η_add = 23% (Typ.)
• Broad Band: 14.0 ~ 14.5GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
FLM1414-12F
X, Ku-Band Internally Matched FET
DESCRIPTION
The FLM1414-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in
a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT
Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 34.0 and -5.0 mA respectively with
gate resistance of 50Ω.
Rating
15
-5
57.6
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Unit
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 6000 9000
mA
Transconductance
gm VDS = 5V, IDS = 3600mA - 5000 -
mS
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Vp
VGSO
P1dB
G1dB
Idsr
η_add
VDS = 5V, IDS = 300mA
IGS = -340µA
VDS =10V,
IDS = 0.6 IDSS _(Typ.),
f = 14.0 ~ 14.5 GHz,
ZS = ZL= 50 ohm
-0.5 -1.5 -3.0
-5
-
-
39.5 40.5 -
4.0 5.0 -
- 3600 4500
- 23 -
V
V
dBm
dB
mA
%
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IB
Rth
∆Tch
Channel to Case
10V x Idsr x Rth
- 2.3 2.6
°C/W
-
-
80
°C
G.C.P.: Gain Compression Point
Edition 1.3
August 2004
1