FLM1314-18F Datasheet, PDF (1/5 Pages) Eudyna Devices Inc – X,Ku-Band Internally Matched FET

FLM1314-18F
FEATURES
High Output Power: P1dB=42.5dBm(Typ.)
High Gain: G1dB=6.0dB(Typ.)
High PAE: ηadd=27%(Typ.)
Broad Band: 13.75~14.5GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed Package
X,Ku-Band Internally Matched FET
DESCRIPTION
The FLM1314-18F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 ^oC)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VD S
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
75
W
Storage Temperature
Tstg
-65 to +150
o_C
Channel Temperature
Tch
175
o_C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25^o C)
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Symbol
VD S
IGF
IGR
Condition
RG=25 ohm
RG=25 ohm
Limit
Unit
10
V
44.6
mA
-9.6
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^o C)
Item
Symbol
Condition
Limit
Unit
Min. Typ. Max.
Drain Current
Trans conductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
IDSS
gm
Vp
VGSO
P1dB
G1dB
Id s r
Nadd
∆G
V DS=5V , V GS=0V
V DS=5V , ID S=4.65A
V DS=5V , ID S=390mA
IGS=-390uA
V DS=10V
IDSDC=4.0A
f= 13.75 ~ 14.5 GHz
Zs=ZL=50 ohm
-
9.3
14
-
6600
-
-0.5 -1.5 -3.0
-5.0
-
-
42.0 42.5
-
5.0
6.0
-
-
5.0
6.0
-
27
-
-
-
1.2
A
mS
V
V
dBm
dB
A
%
dB
3rd Order Intermodulation
Distortion
f=14.5 GHz
IM3
∆ f=10MHz 2-tone Test
-25
-30
-
dBc
Pout=36.0dBm (S.C.L.)
Thermal Resistance
Channel Temperature Rise
Rth
∆ Tch
Channel to Case
10V x Idsr X Rth
-
1.8
2.0
o_C/W
-
-
100
o_C
CASE STYLE : IB
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
ESD
Class III 2000V ~
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kΩ)
Edition 1.1
May 2005
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