FLM1314-12F Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – X, Ku-Band Internally Matched FET

FLM1314-12F
FEATURES
X, Ku-Band Internally Matched FET
• High Output Power: P1dB = 41.0dBm (Typ.)
• High Gain: G1dB = 6.0dB (Typ.)
• High PAE: η_add = 23% (Typ.)
• Low IM3 = -45dBc@Po = 29.0dBm
• Broad Band: 13.75 ~ 14.5GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
DESCRIPTION
The FLM1314-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
75
W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 48.0 and -6.6 mA respectively with
gate resistance of 50Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Unit
Saturated Drain Current
Transconductance
IDSS VDS = 5V, VGS = 0V
- 6.7 10
A
gm VDS = 5V, IDS = 4200mA _{- 6700} -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 335mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
VGSO
P1dB
G1dB
Idsr
η_add
∆G
IGS = -335µA
VDS =10V,
IDS = 0.65 IDSS _(Typ.),
f = 13.75 ~ 14.5 GHz,
ZS = ZL= 50 ohm
-5.0 -
-
40.5 41.0 -
5.0 6.0 -
- 4200 5000
-
23 -
-
- ±0.6
V
dBm
dB
mA
%
dB
3rd Order Intermodulation
Distortion
Thermal Resistance
f = 14.5GHz, ∆f = 10 MHz
IM3 ^{2-Tone Test}
Pout = 29.0dBm S.C.L.
-42 -45 -
Rth _{Channel to Case}
- 1.8 2.0
dBc
°C/W
Channel Temperature Rise
∆Tch _{10V x Idsr x Rth}
-
-
80
°C
CASE STYLE: IB
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1
August 2004
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