FLM1213-6F Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – X, Ku-Band Internally Matched FET

FLM1213-6F
X, Ku-Band Internally Matched FET
FEATURES
• High Output Power: P1dB = 37.5dBm (Typ.)
• High Gain: G1dB = 7.0dB (Typ.)
• High PAE: η_add = 27% (Typ.)
• Low IM3 = -45dBc@Po = 25dBm
• Broad Band: 12.7 ~ 13.2GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
DESCRIPTION
The FLM1213-6F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain
in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT
Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.0 and -2.8 mA respectively with
gate resistance of 100Ω.
Rating
15
-5
31.2
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Unit
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 2800 4200
mA
Transconductance
gm VDS = 5V, IDS = 1800mA - 2350 -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 120mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO _{IGS = -120µA}
-5
-
-
V
Output Power at 1dB G.C.P.
P1dB
36.5 37.5 -
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-Added Efficiency
G1dB VDS = 10V,
6.0 7.0 -
dB
Idsr
IDS = 0.6 IDSS(Typ.),
f = 12.7 ~ 13.2GHz,
- 1800 2100
mA
η_add ZS = ZL = 50Ω
-
27
-
%
Gain Flatness
∆_G
-
- ±0.6
dB
3rd Order Intermodulation
Distortion
Thermal Resistance
f = 13.2GHz, ∆f = 10MHz
IM3 2-Tone Test
-42 -45 -
Pout = 25dBm S.C.L.
Rth _{Channel to Case}
- 4.0 4.5
dBc
°C/W
CASE STYLE: IA
G.C.P.: Gain Compression Point
Edition 1.4
August 2004
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