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FLM1213-12F Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – X, Ku-Band Internally Matched FET
FLM1213-12F
X, Ku-Band Internally Matched FET
FEATURES
• High Output Power: P1dB = 40.5dBm (Typ.)
• High Gain: G1dB = 5.5dB (Typ.)
• High PAE: ηadd = 24% (Typ.)
• IM3 = -45dBc@Po = 28dBm
• Broad Band: 12.7 ~ 13.2GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
DESCRIPTION
The FLM1213-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
57.6
W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 34.0 and -5.0 mA respectively with
gate resistance of 50Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 6000 9000
mA
Transconductance
gm VDS = 5V, IDS = 3600mA - 5000 -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 300mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO IGS = -340µA
-5
-
-
V
Output Power at 1dB G.C.P.
P1dB
39.5 40.5 -
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-Added Efficiency
G1dB VDS = 10V
4.5 5.5 -
dB
f = 12.7 ~ 13.2 GHz
Idsr IDS = 0.6 IDSS(Typ.)
- 3600 4500
mA
ηadd ZS = ZL = 50Ω
-
24
-
%
Gain Flatness
∆G
-
- ±0.6
dB
3rd Order Intermodulation
Distortion
Thermal Resistance
f = 13.2GHz, ∆f = 10MHz
IM3 2-Tone Test
-42 -45 -
Pout = 28dBm S.C.L.
Rth Channel to Case
- 2.3 2.6
dBc
°C/W
Channel Temperature Rise
CASE STYLE: IB
∆Tch 10V x Idsr x Rth
-
- 80
°C
G.C.P.: Gain Compression Point
Edition 1.3
August 2004
1