FLM1011-20F Datasheet, PDF (1/5 Pages) Eudyna Devices Inc – X,Ku-Band Internally Matched FET

FLM1011-20F
FEATURES
・High Output Power: P1dB=43.0dBm(Typ.)
・High Gain: G1dB=7.0dB(Typ.)
・High PAE: ηadd=27%(Typ.)
・Broad Band: 10.7～11.7GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
X,Ku-Band Internally Matched FET
DESCRIPTION
The FLM1011-20F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^°C)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
93.7
W
Storage Temperature
Tstg
-65 to +175
o_C
Channel Temperature
Tch
175
o_C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25^°C)
Item
Symbol
Condition
Limit
DC Input Voltage
VDS
≤10
Forward Gate Current
IGF
RG=25Ω
≤64
Reverse Gate Current
IGR
RG=25Ω
≥-11.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^°C)
Item
Drain Current
Symbol
IDSS
Test Conditions
VDS=5V, VGS=0V
Min.
-
Limit
Typ.
10.8
Max. ^Unit
16.2
A
Transconductance
gm
VDS=5V, IDS=6480mA
-
10
-
S
Pinch-off Voltage
Gate-Source Breakdown Voltage
Vp
VDS=5V, IDS=600mA
-0.5 -1.5
-3.0
V
VGSO
IGS=-600µA
-5.0
-
-
V
Output Power at 1dB G.C.P.
P1dB
42
43
-
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
G1dB
Idsr
ηadd
VDS=10V
f=10.7 - 11.7 GHz
IDS=0.60IDSS(typ)
Zs=ZL=50Ω
6.0
7.0
-
dB
-
6.0
7.2
A
-
27
-
%
Gain Flatness
∆G
-
-
1.2
dB
3rd Order Intermodulation
Distortion
Thermal Resistance
f= 11.7 GHz
IM3
Δf=10MHz, 2-tone Test -42.0 -45.0
-
dBc
Pout=31.0dBm (S.C.L.)
Rth
Channel to Case
-
1.4
1.6
o_{C /W}
Channel Temperature Rise
CASE STYLE: IK
∆Tch
10V x Idsr X Rth
-
-
100
o_C
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
ESD
Class III
2000V　~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kW)
Edition 1.2
September 2004
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