FLM1011-15F Datasheet, PDF (1/5 Pages) Eudyna Devices Inc – X,Ku-Band Internally Matched FET

FLM1011-15F
FEATURES
・High Output Power: P1dB=42.0dBm(Typ.)
・High Gain: G1dB=7.0dB(Typ.)
・High PAE: ηadd=31%(Typ.)
・Broad Band: 10.7~11.7GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
X,Ku-Band Internally Matched FET
DESCRIPTION
The FLM1011-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^°C)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Storage Temperature
Tstg
Channel Temperature
Tch
57.7
W
-65 to +175
o_C
175
o_C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25^°C)
Item
Symbol
Condition
Limit
Unit
DC Input Voltage
VDS
≤10
V
Forward Gate Current
IGF
RG=50Ω
≤16.7
mA
Reverse Gate Current
IGR
RG=50Ω
≥-3.62
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^°C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
ηadd
∆G
Test Conditions
VDS=5V, VGS=0V
VDS=5V, IDS=4.55A
VDS=5V, IDS=300mA
IGS=-300uA
VDS=10V
f=10.7 - 11.7 GHz
IDS=0.5Idss (typ)
Zs=ZL=50Ω
Min.
-
-
-0.5
-5.0
41.0
6.0
-
-
-
Limit
Typ.
7.2
4500
-1.5
-
42.0
7.0
4.0
31
-
Max.
10.8
-
-3.0
-
-
-
5.0
-
1.2
Unit
A
mS
V
V
dBm
dB
A
%
dB
Thermal Resistance
Channel Temperature Rise
Rth
∆Tch
Channel to Case
10V x Idsr x Rth
-
2.3
2.6
o_C/W
-
-
100
o_C
3rd Order Intermodulation
Distortion
CASE STYLE: IB
f=11.7GHz,
IM3
∆ f=10MHz, 2-Tone Test
-42
-45
-
dBc
Pout=30.0dBm S.C.L.
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
ESD
Class III
2000V　~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.2
September 2004
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