FLM0910-3F Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – X, Ku-Band Internally Matched FET

FLM0910-3F
FEATURES
• High Output Power: P1dB = 35.0dBm (Typ.)
• High Gain: G1dB = 7.5dB (Typ.)
• High PAE: η_add = 29% (Typ.)
• Low IM3 = -46dBc@Po = 24.0dBm
• Broad Band: 9.5 ~ 10.5GHz
• Impedance Matched Zin/Zout = 50Ω
X, Ku-Band Internally Matched FET
DESCRIPTION
The FLM0910-3F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
15
V
-5
V
Total Power Dissipation
PT
Tc = 25°C
25.0
W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
IDSS
gm
Vp
VGSO
P1dB
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 900mA
VDS = 5V, IDS = 70mA
IGS = -70µA
Min.
-
-
-0.5
-5.0
34.0
Limit
Typ. Max.
1400 2100
1300 ^-
-1.5 -3.0
-
-
35.0 -
Unit
mA
mS
V
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
G1dB VDS =10V,
6.5 7.5 -
dB
Idsr
IDS = 0.6 IDSS _(Typ.),
f =9.5 ~10.5 GHz,
- 900 1100
mA
η_{add ZS=ZL= 50 ohm}
- 29 -
%
∆G
-
- ±0.6
dB
3rd Order Intermodulation
Distortion
f = 10.5 GHz, ∆f = 10 MHz
IM3 ^{2-Tone Test}
-44 -46 -
dBc
Pout = 24.0dBm S.C.L.
Thermal Resistance
Rth _{Channel to Case}
- 5.0 6.0
°C/W
Channel Temperature Rise
CASE STYLE: IA
∆Tch
10V x Idsr x Rth
-
- 66
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.2
August 2004
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