FLM0910-25F Datasheet, PDF (1/5 Pages) Eudyna Devices Inc – X-Band Internally Matched FET

FLM0910-25F
FEATURES
・High Output Power: P1dB=44dBm(Typ.)
・High Gain: G1dB=7.0dB(Typ.)
・High PAE: ηadd=30%(Typ.)
・Broad Band: 9.5～10.5GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
X-Band Internally Matched FET
DESCRIPTION
The FLM0910-25F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃)
Item
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Rating
Unit
15
V
-5
V
Total Power Dissipation
PT
93.7
W
Storage Temperature
Tstg
-65 to +175
℃
Channel Temperature
Tch
175
℃
Recommended Operating Condition(Case Temperature Tc=25℃)
Item
Symbol
Condition
Limit
DC Input Voltage
VDS
≦10
Forward Gate Current
IGF
RG=25Ω
≦64
Reverse Gate Current
IGR
RG=25Ω
≧-11.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
ηadd
ΔG
Test Conditions
VDS=5V , VGS=0V
VDS=5V , IDS=6.92A
VDS=5V , IDS=500mA
IGS=-500uA
VDS=10V
f=9.5 - 10.5 GHz
IDS=0.6Idss
Zs=ZL=50Ω
Min.
-
-
-0.5
-5.0
43
6.0
-
-
-
Limit
Typ.
10.8
10000
-1.5
-
Max.
16.2
-
-3.0
-
44
-
7.0
-
6.5
7.2
30
-
-
±0.6
Unit
A
mS
V
V
dBm
dB
A
%
dB
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IK
Rth
ΔTch
Channel to Case
10V X Idsr X Rth
-
1.4
1.6
℃/W
-
-
100
℃
G.C.P.:Gain Compression Point
ESD
Class Ⅲ
2000V　～
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.3
September 2004
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