FLM0910-15F Datasheet, PDF (1/5 Pages) Eudyna Devices Inc – X-Band Internally Matched FET

FLM0910-15F
FEATURES
High Output Power: P1dB=42.0dBm(Typ.)
High Gain: G1dB=7.5dB(Typ.)
High PAE: ηadd=32%(Typ.)
Broad Band: 9.5~10.5GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed Package
X-Band Internally Matched FET
DESCRIPTION
The FLM0910-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^oC)
Ite m
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
V GS
-5
V
Total Pow e r Dissipation
PT
57.7
W
Storage Temperature
Tstg
-65 to +175
o_C
Channel Temperature
Tch
175
o_C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25^oC)
Ite m
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
Symbol
VDS
IGF
IGR
Condition
RG=50 ohm
RG=50 ohm
Lim it
Unit
10
V
16.7
mA
-3.62
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)
Lim it
Ite m
Symbol
Condition
Unit
M in. Typ. M ax.
Drain Current
IDSS
V DS=5V , V GS=0V
-
7.2 10.8
A
Trans conductance
gm
V DS=5V , IDS=3.5A
-
4500
-
mS
Pinch-off Voltage
Vp
V DS=5V , IDS=300mA
-0.5 -1.5 -3.0
V
Gate-Source Breakdown Voltage
V GSO IGS=-300uA
-5.0
-
-
V
Output Pow e r at 1dB G.C.P.
Pow e r Gain at 1dB G.C.P.
Drain Current
Pow e r -added Efficiency
Gain Flatne s s
Therm al Re s istance
P1dB
V DS=10V
G1dB
IDS=0.5IDSS (typ.)
Idsr
f= 9.5 ~ 10.5 GHz
Nadd
∆^G
Zs=ZL=50 ohm
Rth
Channel to Case
41.0 42.0
-
dBm
6.5 7.5
-
dB
-
4.0 5.0
A
-
32
-
%
-
-
1.2
dB
-
2.3 2.6
o_C/W
Channe l Te m perature Rise
∆ ^Tch
10V x Idsr X Rth
-
-
100
o_C
CASE STYLE : IB
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Lev el
ESD
Class III 2000V ~
Edition 1.1
May 2005
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