FLL810IQ-3C Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – L-Band High Power GaAs FET

FEATURES
• Push-Pull Configuration
• High Power Output: 80W
• High PAE: 50%.
• Excellent Linearity
• Suitable for class AB operation.
• Hermetically Sealed Package
FLL810IQ-3C
L-Band High Power GaAs FET
DESCRIPTION
The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.
This device offers excellent linearity, ease of matching, and greater consistency
in covering the frequency band of 2.5 to 2.7 GHz. This new product is uniquely
suited for use in MMDS applications as it offers high gain, long term reliability
and ease of use.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
V_DS
V_GS
P_T
T_stg
T_ch
Tc = 25°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with
gate resistance of 5Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
136
-65 to +175
+175
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Symbol
Conditions
Drain Current
I_DSS
V_DS = 5V, V_GS = 0V
Limits
Min. Typ. Max.
-
8
-
Pinch-Off Voltage
V_p
V_DS = 5V, I_DS = 220mA -0.1 -0.3 -0.5
Gate-Source Breakdown Voltage V_GSO I_GS = -2.2mA
-5
-
-
Output Power
Linear Gain (Note 1)
Power-Added Efficiency
Drain Current
P_out
GL
η_add
I_DSR
V_DS = 12V
f = 2.6 GHz
I_DS = 5.0A
Pin = 40.0dBm
Thermal Resistance
R_th
Channel to Case
CASE STYLE: IQ
Note 1: The condition for GL is the same as Pout except Pin = 25.0dBm.
48.0 49.0 -
11.0 12.0 -
- 50 -
- 11.5 15.0
- _{0.8 1.1}
Unit
V
V
W
°C
°C
Unit
A
V
V
dBm
dB
%
A
°C/W
Edition 1.1
October 2001
1