FLL600IQ-2C Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – L-Band High Power GaAs FET

FEATURES
• Push-Pull Configuration
• High Power Output: 60W (Typ.)
• High PAE: 51% (Typ.)
• Broad Frequency Range: 2100 to 2200 MHz.
• Suitable for class AB operation.
FLL600IQ-2C
L-Band High Power GaAs FET
DESCRIPTION
The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in W-CDMA and IMT 2000 base
station amplifiers as it offers high gain, long term reliability and ease of use.
APPLICATIONS
• Solid State Base-Station Power Amplifier.
• W-CDMA and IMT 2000 Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
V_DS
15
V
Gate-Source Voltage
V_GS
-5
V
Total Power Dissipation
P_T
Tc = 25°C
125
W
Storage Temperature
T_stg
-65 to +175
°C
Channel Temperature
T_ch
+175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 117 and -35.4 mA respectively with
gate resistance of 10Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Symbol
Conditions
Drain Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power
Linear Gain
Drain Current
Power-Added Efficiency
Thermal Resistance
CASE STYLE: IU
I_DSS
V_p
V_GSO
P_out
GL
I_DSR
η_add
R_th
V_DS = 5V, V_GS = 0V
V_DS = 5V, I_DS = 151mA
I_GS = -1.51mA
V_DS = 12V
f = 2.17 GHz
I_DS = 1.5A
Pin = 39dBm
Channel to Case
Limits
Min. Typ. Max.
-
6
-
-0.1 -0.3 -0.5
-5
-
-
47.0 48.0 -
11.0 12.0 -
-
9 13
- 51 -
- _{0.8 1.2}
Unit
A
V
V
dBm
dB
A
%
°C/W
Edition 1.0
February 2000
1