FLL410IK-3C Datasheet, PDF (1/6 Pages) Eudyna Devices Inc – L-Band High Power GaAs FET

FLL410IK-3C
FEATURES
・High Output Power: Pout=46.0dBm(Typ.)
・High Gain: GL=13.0dB(Typ.)
・High PAE: ηadd=52%(Typ.)
・Broad Band: 2.5~2.7GHz
・Hermetically Sealed Package
L-Band High Power GaAs FET
DESCRIPTION
The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is
designed for use in 2.5 – 2.7 GHz band amplifiers. This new product
is uniquely suited for use in MMDS applications as it offers excellent
linearity, high efficiency, high gain, long term reliability and ease of use.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^oC)
Item
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Rating
Unit
15
V
-5
V
Total Power Dissipation
PT
Storage Temperature
Tstg
100
W
-65 to +175
o_C
Channel Temperature
Tch
175
o_C
RECOMMENNDED OPERATING CONDITION(Case Temperature Tc=25^oC)
Item
Symbol
Condition
Limit
Unit
DC Input Voltage
VDS
≤12
V
Gate Current
IGF
RG=5Ω
≤88
mA
Gate Current
IGR
RG=5Ω
≥-25
mA
Operating Channel Temperature
Tch
≤145
o_C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)
Item
Symbol
Test Conditions
Limit
Min. Typ.
Drain Current
IDSS
VDS=5V, VGS=0V
-
4.0
Pinch-off Voltage
Vp
VDS=5V, IDS=110mA
-0.1 -0.3
Gate-Source Breakdown Voltage
VGSO
IGS=-1.1mA
-5.0
-
Output Power
Linear Gain　*1
Drain Current
Power-added Efficiency
POUT
GL
Idsr
ηadd
VDS=12V
f=2.6 GHz
IDS=3A
Pin=35.0dBm
45.0 46.0
12.0 13.0
-
5.9
-
52
Thermal Resistance
Rth
*１：GL is measured at Pin=22.0dBm
Channel to Case
-
1.3
Max.
-
-0.5
-
-
-
7.6
Unit
A
V
V
dBm
dB
A
-
%
1.5
o_C/W
CASE STYLE: IK
ESD
Class Ⅲ
2000V　~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.1
Oct 2003
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