FLL400IP-2 Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – L-Band Medium & High Power GaAs FET

FLL400IP-2
L-Band Medium & High Power GaAs FET
FEATURES
• Push-Pull Configuration
• High Power Output: 35W (Typ.)
• High PAE: 44% (Typ.)
• Broad Frequency Range: 800 to 2000 MHz.
• Suitable for class A operation at 10V
and class AB operation at 12V
DESCRIPTION
The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and complexity
of highly linear, high power base station transmitting amplifiers. This new product is
uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain,
long term reliability and ease of use.
APPLICATIONS
• Solid State Base-Station Power Amplifier.
• PCS/PCN Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Symbol
Condition
Rating
Unit
Drain-Source Voltage
V_DS
15
V
Gate-Source Voltage
V_GS
-5
V
Total Power Dissipation
P_T
Tc = 25°C
107
W
Storage Temperature
T_stg
-65 to +175
°C
Channel Temperature
T_ch
+175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with
gate resistance of 25Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Min.
Limits
Typ. Max.
Drain Current
I_DSS
V_DS = 5V, V_GS=0V
- 12 16
Transconductance
gm
V_DS = 5V, I_DS=7.2A
- 6000 ^-
Unit
A
mS
Pinch-Off Voltage
V_p
V_DS = 5V, I_DS=720mA -1.0 -2.0 -3.5
V
Gate-Source Breakdown Voltage V_GSO I_GS = -720µA
-5
-
-
V
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Thermal Resistance
CASE STYLE: IP
P_1dB
G_1dB
I_DSR
η_add
P_1dB
G_1dB
R_th
V_DS = 12V
f=1.96GHz
I_DS = 2A
V_DS = 10V
f=1.96GHz
I_DS = 2A
Channel to Case
44.5 45.5 -
9.0 10.0 -
dBm
dB
- 6.0 8.0
- 44 -
- 44.5 -
- 10.0 -
- _{1.0 1.4}
A
%
dBm
dB
°C/W
G.C.P.: Gain Compression Point
Edition 1.6
December 1999
1