FLL400IK-2C Datasheet, PDF (1/3 Pages) Eudyna Devices Inc – High Voltage - High Power GaAs FET

FLL400IK-2C
High Voltage - High Power GaAs FET
FEATURES
High Output Power: P1dB=46.0dBm(Typ.)
High Gain: G1dB=13.0dB(Typ.)
High PAE: ηadd=45%(Typ.)
Broad Band: 2.11~2.17GHz
Hermetically Sealed Package
DESCRIPTION
The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited
for use in W-CDMA base station amplifier as long term reliability.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25^oC)
Item
Symbol
Rating
Drain-Source Voltage
VDS
15
Gate-Source Voltage
VGS
-5
Total Power Dissipation
PTot
100
Storage Temperature
Channel Temperature
Tstg
Tch
-65 to +175
175
Unit
V
V
W
o_C
o_C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25^oC)
Item
Symbol Condition
Limit
DC Input Voltage
VDS
12
Forward Gate Current
IGF
RG=5Ω
<85
Reverse Gate Current
IGR
RG=5Ω
>-25
Operating channel temperature Tch
145
Unit
V
mA
mA
o_C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)
Item
Symbol Condition
Limit
Min. Typ. Max.
Pinch-off Voltage
Vp VDS=5V,IDS=110mA -0.1 -0.3 -0.5
Gate-Source Breakdown Voltage VGSO IGS=-1.1mA
-5.0 -
-
Output Power at 1dB G.C.P.
P1dB
45.0 46.0 -
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
G1dB
Idsr
ηadd
V DD=12V
f=2.17GHz
IDS(DC)=1.5A
Pin=35dBm
12.0 13.0 -
- 6.7 8.7
- 45.0 -
Thermal Resistance
Rth
- 1.3 1.5
Unit
V
V
dBm
dB
A
%
o_C/W
CASE STYLE: IK
Class III
2000 V~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.2
September 2004
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