FLL400IK-2 Datasheet, PDF (1/3 Pages) Eudyna Devices Inc – High Voltage - High Power GaAs FET

FLL400IK-2
High Voltage - High Power GaAs FET
FEATURES
High Output Power: P1dB=46.5dBm(Typ.)
High Gain: G1dB=12.0dB(Typ.)
High PAE: ηadd=46%(Typ.)
Broad Band: 1.8~2.0GHz
Hermetically Sealed Package
DESCRIPTION
The FLL400IK-2 is a 40 Watt GaAs FET that is specially suited
for use in PHS base station amplifier as long term reliability.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25^oC)
Item
Symbol
Rating
Drain-Source Voltage
V^DS
15
Gate-Source Voltage
VGS
-5
Total Power Dissipation
PTot
93.7
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Unit
V
V
W
o_C
o_C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25^oC)
Item
Symbol Condition
Limit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
VDS
IGF
IGR
RG=10Ω
RG=10Ω
12
<54.4
>-17.4
Operating channel temperature Tch
145
Unit
V
mA
mA
o_C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)
Item
Symbol Condition
Limit
Min. Typ. Max.
Transconductance
gm ^{VDS=5V,IDS=8.0A}
- 9.0 -
Pinch-off Voltage
Vp ^{VDS=5V,IDS=1.08A}
-1.0 -2.0 -3.5
Gate-Source Breakdown Voltage VGSO IGS=-1.08mA
-5.0 -
-
Output Power at 1dB G.C.P.
P1dB
45.5 46.5 -
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
G1dB
Idsr
η add
VDD=12V
f=1.9GHz
IDS(DC)=4A
11.5 12.0 -
- 7.5 8.5
- 46.0 -
Thermal Resistance
Rth
- 1.3 1.6
Unit
S
V
V
dBm
dB
A
%
o_C/W
Class III
2000 V~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
CASE STYLE: IK
Edition 1.1
Augest 2004
1