FLL357ME Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – L-Band Medium & High Power GaAs FET

FEATURES
• High Output Power: P1dB=35.5dBm (Typ.)
• High Gain: G1dB=11.5dB (Typ.)
• High PAE: η_add=46% (Typ.)
• Proven Reliability
• Hermetically Sealed Package
FLL357ME
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLL357ME is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency superior to that of silicon devices. The performance in
multitone environments for Class AB operation make them ideally suited
for base station applications. This device is assembled in hermetic
metal/ceramic package.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
Gate-Source Voltage
VGS
-5
Total Power Dissipation
Ptot
Tc = 25°C
15
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 19.4 and -2.0 mA respectively with
gate resistance of 100Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 1200 1800
Transconductance
gm VDS = 5V, IDS = 800mA
- 600 ^-
Pinch-off Voltage
Vp VDS = 5V, IDS = 60mA -1.0 -2.0 -3.5
Gate Source Breakdown Voltage VGSO _{IGS = -60µA}
-5
-
-
V
V
W
°C
°C
Unit
mA
mS
V
V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V
IDS ≈ 0.6IDSS _(Typ.),
f = 2.3GHz
34.5 35.5 -
10.5 11.5 ^-
dBm
dB
Power-added Efficiency
η_add
-
46
-
%
Thermal Resistance
CASE STYLE: ME
Rth _{Channel to Case}
- 7.5 ¹⁰
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1