FLL310IQ-3A Datasheet, PDF (1/5 Pages) Eudyna Devices Inc – High Voltage - High Power GaAs FET

FLL310IQ-3A
FEATURES
High Voltage - High Power GaAs FET
Push-Pull Configuration
High Power Output:30W
Excellent Linearity
Suitable for class A and class AB operation.
High PAE:40%
DESCRIPTION
The FLL310IQ-3A is a 30 Watt GaAs FET that employ a push-pull
design which offers excellent linearity, ease of matching, and greater
consistency in covering the frequency band of 2.5 to 2.7GHz.
This new product is ideally suited for use in MMDS design requirements
as it offers high gain, long term reliability and ease of use.
EUD stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25^oC)
Item
Symbol
Rating
Drain-Source Voltage
VDS
15
Gate-Source Voltage
VGS
-5
Total Power Dissipation
PTot
107
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Unit
V
V
W
o_C
o_C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25^oC)
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Symbol
VDS
IGF
IGR
Condition
RG=25Ω
RG=25Ω
Limit
10
<54.4
>-17.4
Operating channel temperature Tch
145
Unit
V
mA
mA
o_C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)
Item
Symbol
Condition
Limit
Min. Typ. Max.
Unit
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
IDSS
gm
Vp
VGSO
VDS=5V,VGS=0V
VDS=5V,IDS=7.2A
VDS=5V,IDS=720mA
IGS=-720uA
-
-
-1.0
-5.0
1200
6000
-2.0
-
1600
-
-3.5
-
mA
mS
V
V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
P1dB
G1dB
IDSR
V DS=10V
f=2.7GHz
IDS(DC)=7.0A
44.0 45.0
-
8.0 9.0
-
-
7.0
8
dBm
dB
A
Power-added Efficiency
3rd Order Intermoduation
ηadd ^Note1
-
40.0
-
%
f=2.7GHz, f=5MHz
Distortion
IM3
2-Tone test
- -40.0 -
dBc
Pout=37.0dBm S.C.L.
Thermal Resistance
Channel Temperature Rise
Rth
Channel to Case
Tch Note2
-
1.0 1.4
oC/W
-
- 100.0
o_C
Note1: Tested in EUD Test Fixture containing external matching.
Note2: Tch=10V x IDSR x Rth
CASE STYLE: IQ
Class III
2000 V~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.1
May 2005
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