FLL300IL-1 Datasheet, PDF (1/6 Pages) Eudyna Devices Inc – L-Band Medium & High Power GaAs FET

FLL300IL-1, FLL300IL-2, FLL300IL-3
L-Band Medium & High Power GaAs FET
FEATURES
• High Output Power: P1dB = 44.5dBm (Typ.)
• High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2)
• High PAE: η_add = 44% (Typ.)
• Proven Reliability
• Hermetically Sealed Package
DESCRIPTION
The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are
specifically designed to provide high power at L-Band frequencies with
gain, linearity and efficiency superior to that of silicon devices. The
performance in multitone environments for Class AB operation make
them ideally suited for base station applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
100
W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 80.4 and -17.4 mA respectively with
gate resistance of 25Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions*
Min.
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
-
Transconductance
gm VDS = 5V, IDS = 7200mA
-
Pinch-off Voltage
Vp VDS = 5V, IDS = 720mA
-1.0
Gate Source Breakdown Voltage VGSO _{IGS = -720µA}
-5
Output Power
at 1dB G.C.P.
Power Gain
at 1dB G.C.P.
FLL300IL-1
FLL300IL-2
FLL300IL-3
FLL300IL-1
FLL300IL-2
FLL300IL-3
f=900MHz
P1dB
f=1.8GHz 43.0
VDS = 10V
f=2.6GHz
IDS = 0.5 IDSS _{f=900MHz 11.0}
G1dB
(Typ.) _{f=1.8GHz 10.0}
f=2.6GHz _8.0
Drain Current
Idsr _{VDS = 10V}
-
Power added Efficiency
η_add ^{IDS = 0.5 IDSS (Typ.)}
-
Thermal Resistance
Rth Channel to Case
-
Channel Temperature Rise
∆Tch (10V x Idsr - Pout + Pin) x Rth -
CASE STYLE: IL
* Under fixed VGS bias condition
Limit
Typ. Max.
Unit
12 16
A
6000 ^-
mS
-2.0 -3.5
V
-
-
V
44.5 -
dBm
13.0 ^-
dB
12.0 ^-
dB
10.0 ^-
dB
6.0 8.0
A
44 ^-
1.1 1.5
- 80
%
°C/W
°C
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
1