FLL21E180IU Datasheet, PDF (1/6 Pages) Eudyna Devices Inc – High Voltage - High Power GaAs FET

FLL21E180IU
FEATURES
High Voltage Operation : VDS=28V
High Gain: 15.0dB(typ.) at Pout=46dBm(Avg.)
Broad Frequency Range : 2100 to 2200MHz
Proven Reliability
High Voltage - High Power GaAs FET
DESCRIPTION
The FLL21E180IU is a high power GaAs FET that offers
high efficiency, ease of matching, greater consistency and
broad bandwidth for high power L-band amplifiers.
This device is target for high voltage, low current operation in
digitally modulated base station. This product is ideally suited
for W-CDMA base station amplifiers while offering high gain long
term reliability and ease for use.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
Pt
Storage Temperature
Tstg
Channel Temperature
Tch
Condition
Tc=25 ^oC
Rating
32
-3
230
-65 to +175
200
Unit
V
V
W
o_C
o_C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25 ^oC)
Item
Symbol Condition
Limit
Unit
DC Input Voltage
VDS
<28
V
Forward Gate Current
I GF
Reverse Gate Current
IGR
Channel Temperature
Tch
RG=1 Ω
RG=1 Ω
<705
mA
>-64
mA
155
o_C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 ^oC)
Item
Symbol Condition
min.
Pinch-Off Voltage
Vp
VDS=5V IDS=150mA -0.1
Gate-Source Breakdown Voltage
VGSO IGS=-1.5mA
-5
3rd Order Inter modulation Distortion
IM3
VDS=28V
-
Power Gain
Gp
IDS(DC)=1.7A
14.0
Drain Efficiency
ηd
Pout=46dBm(Avg.)
-
Adjacent Channel Leakage Power Ratio ACLR
note
-
Thermal Resistance
Rth
Channel to Case
-
Limit
Typ. Max.
-0.2 -0.5
-34
15.0
26.0
-35
0.55
-30
-
-
-
0.65
Unit
V
V
dBc
dB
%
dBc
o_{C /W}
Note 1 : IM3 ACLR and Gain test condition as follows:
IM3 & Gain : fo=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-00) BS-164ch
non clipping modulation measured over 3.84MHz at fo-15MHz and fI+15MHz.
ACLR : fo=2.1325GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch non clipping modulation,
measured over 3.84MHz at fo+/-5MHz.
Edition 1.2
Mar 2004
1