FLL21E135IX Datasheet, PDF (1/7 Pages) Eudyna Devices Inc – L,S-band High Power GaAs FET

FEATURES
・High Voltage Operation (VDS=28V) GaAs FET
・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.)
・Broad Frequency Range : 2110 to 2170MHz
・High Reliability
FLL21E135IX
L,S-band High Power GaAs FET
DESCRIPTION
The FLL21E135IX is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is target for high voltage, low
current operation in digitally modulated base station amplifiers. This
product is ideally suited for W-CDMA and Multi-carrier PCS base station
amplifiers while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATING
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
V_DS
V_GS
TC=25^oC
(Case Tem perature)
32
-3
V
V
P_T
175
W
T _{s tg}
-
65 to +175
o_C
T_ch
-
200
o_C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25^oC)
Item
Symbol
Condition
Limit
Unit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
V_DS
I_GF
R_G=2Ω
I_GR
R_G=2Ω
T_ch
<28
V
<529
mA
>-48
mA
155
o_C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)
Item
Symbol
Condition
Limit
Unit
Min. Typ. Max.
Pinch-Off Voltage
Gate-Source Breakdown Boltage
3rd Order Intermodulation Distortion
Power Gain
Drain Efficiency
Adjacent Channel Leakage Power Ratio
Themal Resistance
V_P
V_GSO
IM₃
G_P
η_D
ACLR
R_th
V_DS=5V, I_DS=226mA
I_GS=-2.26mA
V_DS=28V
I_DS(DC)=1000mA
P_out=44.8dBm(Avg.)
Note 1
Channel to Case
-0.1 -0.2 -0.5
-5 -
-
- -33 -30
14.5 15.5 -
- 26 -
- -35 -
- 0.8 1.0
V
V
dBc
dB
%
dBc
o_C/W
Note 1 : IM₃, ACLR and Gain test conditions as follows
IM₃ & Gain : f₀=2.1325GHz, f₁=2.1475GHz W-CDMA(3GPP3.4 12-0) BS-1 64ch non clipping modulation measured over 3.84MHz at f₀-15MHz and f₁+15MHz.
ACLR : f₀=2.1325GHz W-CDMA (3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at f₀+/-5MHz
ESD
CLASS III
2000V ~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
CASE STYLE : IX
Edition 1.1
June 2004
1