FLL21E040IK Datasheet, PDF (1/6 Pages) Eudyna Devices Inc – High Voltage - High Power GaAs FET

FLL21E040IK
FEATURES
・High Voltage Operation : VDS=28V
・High Gain: 15dB(typ.) at Pout=40dBm(Avg.)
・Broad Frequency Range : 2100 to 2200MHz
・Proven Reliability
High Voltage - High Power GaAs FET
DESCRIPTION
The FLL21E040IK is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is target for high voltage, low
current operation in digitally modulated base station amplifiers. This
product is ideally suited for W-CDMA base station amplifiers while
offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol Condition
Rating
Drain-Source Voltage
VDS
32
Gate-Source Voltage
VGS　　　 Tc=25^oC　　　　 -3
Total Power Dissipation
Pt
83.3
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
200
Unit
V
V
W
o_C
o_C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25^oC)
Item
Symbol Condition
Limit
Unit
DC Input Voltage
VDS
Forward Gate Current
IGF
Reverse Gate Current
IGR
Channel Temperature
Tch
RG=2 Ω
RG=2 Ω
<28
V
<176
mA
>-15.9
mA
155
o_C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)
Item
Symbol Condition
min.
Pinch-Off Voltage
Vp
VDS=5V IDS=150mA -0.1
Gate-Source Breakdown Voltage
VGSO IGS=-1.5mA
-5
3rd Order Intermodulation Distortion
IM3
VDS=28V
-
Power Gain
Gp
IDS(DC)=500mA
14.0
Drain Efficiency
ηd
Pout=40dBm(Avg.)
-
Adjacent Channel Leakage Power Ratio ACLR
note
-
Thermal Resistance
Rth
Channel to Case
-
Limit
Typ. Max.
-0.2 -0.5
-
-
-35 -31
15.0 -
26 -
-36 -
1.6 1.8
Unit
V
V
dBc
dB
%
dBc
o_C/W
Note 1 : IM3 ACLR and Gain test condition as follows:
IM3 & Gain : fo=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch
non clipping modulation measured over 3.84MHz at fo-15MHz and fI+15MHz.
ACLR : fo=2.1325GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch non clipping modulation,
measured over 3.84MHz at fo+/-5MHz.
Edition 1.2
Mar 2004
1