FLL21E004ME Datasheet, PDF (1/6 Pages) Eudyna Devices Inc – High Voltage - High Power GaAs FET

FLL21E004ME
FEATURES
・High Voltage Operation : VDS=28V
・High Power : P1dB=36dBm(typ.) at f=2.17GHz
・High Gain: G1dB=14dB(typ.) at f=2.17GHz
・Broad Frequency Range : 2100 to 2200MHz
・Proven Reliability
High Voltage - High Power GaAs FET
DESCRIPTION
The FLL21E004ME is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is targeted for high voltage, low
current operation in digitally modulated amplification. This product is
ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers
while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol Condition
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS 　　　Tc=25^oC
Total Power Dissipation
Pt
Storage Temperature
Tstg
Channel Temperature
Tch
Rating
32
-3
18.75
-65 to +175
200
Unit
V
V
W
o_C
o_C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25^oC)
Item
Symbol Condition
Limit
Unit
DC Input Voltage
VDS
Forward Gate Current
IGF
Reverse Gate Current
IGR
Channel Temperature
Tch
RG=100Ω
RG=100Ω
<28
V
<6.1
mA
>-1.0
mA
155
o_C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)
Item
Symbol Condition
min.
Pinch-Off Voltage
Vp
VDS=5V IDS=0.6mA -0.1
Gate-Source Breakdown Voltage
VGSO IGS=-6uA
-5
Output Power at 1dB G.C.P.
P1dB VDS=28V f=2.17GHz 35.0
Power Gain at 1dB G.C.P.
G1dB
IDS(DC)=50mA
13.0
Drain Efficiency
ηd
-
Thermal Resistance
Rth
Channel to Case
-
Limit
Typ. Max.
-0.2 -0.5
-
-
36.0 -
14.0 -
40 -
7.0 8.0
Unit
V
V
dBm
dB
%
o_C
G.C.P.:Gain Compression Point
Edition 1.4
Mar. 2004
1