FLL200IB-1 Datasheet, PDF (1/6 Pages) Eudyna Devices Inc – L-Band Medium & High Power GaAs FET

FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET
FEATURES
• High Output Power: P1dB = 42.5dBm (Typ.)
• High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1)
• High PAE: η_add = 34% (Typ.)
• Proven Reliability
• Hermetically Sealed Package
DESCRIPTION
The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that
are specifically designed to provide high power at L-Band frequencies
with gain, linearity and efficiency superior to that of silicon devices.
The performance in multitone environments for Class AB operation make
them ideally suited for base station applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
83.3
W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 53.6 and -11.6 mA respectively with
gate resistance of 25Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power
at 1dB G.C.P.
Power Gain
at 1dB G.C.P.
FLL200IB-1
FLL200IB-2
FLL200IB-3
FLL200IB-1
FLL200IB-2
FLL200IB-3
Drain Current
Power added Efficiency
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
η_add
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 4800mA
VDS = 5V, IDS = 480mA
IGS = -480µA
f=1.5GHz
f=2.3GHz
VDS = 10V
f=2.6GHz
IDS = 0.6 IDSS f=1.5GHz
(Typ.) _f=2.3GHz
f=2.6GHz
VDS = 10V
IDS = 0.6 IDSS _(Typ.)
Min.
-
-
-1.0
-5
41.5
12.0
10.0
10.0
-
-
Limit
Typ. Max.
8 12
4000 -
-2.0 -3.5
-
-
42.5 -
13.0 ^-
11.0 ^-
11.0 ^-
4.8 6.0
34 -
Unit
A
mS
V
V
dBm
dB
dB
dB
A
%
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IB
Rth
∆Tch
Channel to Case
10V x Idsr x Rth
- 1.6 1.8
°C/W
-
- 80
°C
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1