FLL107ME Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – L-Band Medium & High Power GaAs FET

FLL107ME
FEATURES
• High Output Power: P1dB=29.5dBm (Typ.)
• High Gain: G1dB=13.5dB (Typ.)
• High PAE: η_add=47% (Typ.)
• Proven Reliability
• Hermetically Sealed Package
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLL107ME is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency superior to that of silicon devices. The performance in
multitone environments for Class AB operation make them ideally suited
for base station applications. This device is assembled in hermetic
metal/ceramic package.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
Pt
Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with
gate resistance of 400Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
4.16
-65 to +175
175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS VDS = 5V, VGS = 0V
-
gm VDS = 5V, IDS = 200mA
-
Pinch-off Voltage
Vp VDS = 5V, IDS = 15mA -1.0
Gate Source Breakdown Voltage VGSO _{IGS = -15µA}
-5
Limit
Typ. Max.
300 450
150 ^-
-2.0 -3.5
-
-
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V
IDS ≈ 0.6IDSS _(Typ.),
f = 2.3GHz
28.5 29.5 -
12.5 13.5 ^-
Unit
V
V
W
°C
°C
Unit
mA
mS
V
V
dBm
dB
Power-added Efficiency
η_add
-
47
-
%
Thermal Resistance
CASE STYLE: ME
Rth _{Channel to Case}
-
25 ³⁶
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1