FLK057WG Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – X, Ku Band Power GaAs FET

FLK057WG
X, Ku Band Power GaAs FET
FEATURES
• High Output Power: P1dB = 27.0dBm(Typ.)
• High Gain: G1dB = 7.0dB(Typ.)
• High PAE: η_add = 32%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
DESCRIPTION
The FLK057WG is a power GaAs FET that is designed for general
purpose applications in the Ku-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT
Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 4.4 and -0.25 mA respectively with
gate resistance of 1000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
3.75
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
IDSS
gm
Vp
VGSO
P1dB
Power Gain at 1dB G.C.P.
Power-added Efficiency
G1dB
η_add
VDS = 5V, VGS = 0V
VDS = 5V, IDS =125mA
VDS = 5V, IDS =10mA
IGS = -10µA
VDS = 10V,
IDS = 0.6 IDSS _(Typ.),
f = 14.5 GHz
Min.
-
-
-1.0
-5
26.0
6.0
-
Limit
Typ. Max.
200 300
100 ^-
-2.0 -3.5
-
-
27.0 -
7.0 -
32 -
Unit
mA
mS
V
V
dBm
dB
%
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
P1dB
G1dB
η_add
VDS = 10V,
IDS = 0.6 IDSS _(Typ.),
f = 12 GHz
- 27 -
-
8
-
- 34 -
dBm
dB
%
Thermal Resistance
CASE STYLE: WG
Rth _{Channel to Case}
- 20 40
°C/W
G.C.P.: Gain Compression Point
Edition 1.2
August 1999
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