FLK027WG Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – X, Ku Band Power GaAs FET

FLK027WG
X, Ku Band Power GaAs FET
FEATURES
• High Output Power: P1dB = 24.0dBm(Typ.)
• High Gain: G1dB = 7.0dB(Typ.)
• High PAE: η_add = 32%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
DESCRIPTION
The FLK027WG is a power GaAs FET that is designed for general
purpose applications in the Ku-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT
Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 2.2 and -0.1 mA respectively with
gate resistance of 2000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
1.875
-65 to +175
175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS VDS = 5V, VGS = 0V
-
gm VDS = 5V, IDS = 65mA
-
Pinch-off Voltage
Vp VDS = 5V, IDS = 5mA
-1.0
Gate Source Breakdown Voltage VGSO _{IGS = -5µA}
-5
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
P1dB
23.0
VDS = 10V,
G1dB IDS = 0.6 IDSS _(Typ.),
6.0
η_add ^{f = 14.5 GHz}
-
Limit
Typ. Max.
100 150
50 ^-
-2.0 -3.5
-
-
24.0 -
7.0 -
32 -
V
V
W
°C
°C
Unit
mA
mS
V
V
dBm
dB
%
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
Thermal Resistance
CASE STYLE: WG
P1dB
G1dB
η_add
Rth
VDS = 10V,
IDS = 0.6 IDSS _(Typ.),
f = 12 GHz
Channel to Case
- 24 -
dBm
-
8
-
dB
- 34 -
%
- 40 80
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
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