FLK017WF Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – X, Ku Band Power GaAs FET

FLK017WF
FEATURES
• High Output Power: P1dB = 20.5dBm(Typ.)
• High Gain: G1dB = 7.5dB(Typ.)
• High PAE: η_add = 26%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
X, Ku Band Power GaAs FET
DESCRIPTION
The FLK017WF is a power GaAs FET that is designed for general
purpose applications in the Ku-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT
Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 1.34 and -0.05 mA respectively with
gate resistance of 3000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
1.15
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS VDS = 5V, VGS = 0V
-
gm VDS = 5V, IDS = 40mA
-
Pinch-off Voltage
Vp VDS = 5V, IDS = 3mA
-1.0
Gate Source Breakdown Voltage VGSO _{IGS = -3µA}
-5
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
P1dB
19.5
VDS = 10V,
G1dB IDS = 0.6 IDSS _(Typ.),
6.0
η_add ^{f = 14.5 GHz}
-
Limit
Typ. Max.
60 90
30 ^-
-2.0 -3.5
-
-
20.5 -
7.5 -
26 -
Unit
mA
mS
V
V
dBm
dB
%
Noise Figure
Associated Gain
Thermal Resistance
CASE STYLE: WF
NF VDS = 3V,
IDS = 20mA _(Typ.),
Gas _{f = 12 GHz}
Rth _{Channel to Case}
- 2.5 -
dB
-
7
-
dB
-
65 130
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1