FHX76LP Datasheet, PDF (1/5 Pages) Eudyna Devices Inc – Super Low Noise HEMT

FEATURES
• Low Noise Figure: NF=0.40dB (Typ.)@f=12GHz
• High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz
• High Reliability
• Small Size SMT Package
• Tape and Reel Packaging Available
FHX76LP
Super Low Noise HEMT
DESCRIPTION
The FHX76LP is a low noise SuperHEMT^TMproduct designed for DBS
applications. This device uses a small ceramic package that is optimized
for high volume cost driven requirements.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C)
Parameter
Symbol
Condition
Rating
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Total Power Dissipation
Pt
Note
Storage Temperature
TSTG
Channel Temperature
TCH
Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
3.5
-3.0
180
-65 to 150
150
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max.
Saturated Drain Current
I_DSS
V_DS = 2V, V_GS=0V
10 30 60
Transconductance
gm
V_DS = 2V, I_DS=10mA
35 50
-
Pinch-Off Voltage
V_p
V_DS = 2V, I_DS=1mA
-0.1 -0.7 -1.5
Gate-Source Breakdown Voltage V_GSO I_GS = -10µA
Noise Figure
Associated Gain
Thermal Resistance
NF
V_DS = 2V,
Gas
I_DS = 10mA,
f=12GHz
Rth
Channel to Case
CASE STYLES: LP
Note: RF parameters for LP devices are measured on a sample basis as follows:
-3.0 -
-
- 0.40 0.50
12.0 13.5 -
- 300 400
Lot qty.
1200 or less
1201 to 3200
3201 to 10000
10001 or over
Sample qty.
125
200
315
500
Accept/Reject
(0,1)
(0,1)
(1,2)
(1,2)
Unit
V
V
mW
°C
°C
Unit
mA
mS
V
V
dB
dB
°C/W
Edition 1.1
August 2004
1