FHC40LG Datasheet, PDF (1/5 Pages) Eudyna Devices Inc – Super Low Noise HEMT

FEATURES
• Low Noise Figure: 0.3dB (Typ.)@f=4GHz
• High Associated Gain: 15.5dB (Typ.)@f=4GHz
• Lg ≤ 0.15µm, Wg = 280µm
• Gold Gate Metallization for High Reliability
• Cost Effective Ceramic Microstrip (SMT) Package
• Tape and Reel Available
DESCRIPTION
The FH40LG is a Super High Electron Mobility Transistor
(SuperHEMT^TM) intended for general purpose, ultra-low noise and
high gain amplifiers in the 2-12GHz frequency range. This device is
packaged in a cost effective, low parasitic, hermetically sealed
metal-ceramic package for high volume telecommunication, DBS,
TVRO, VSAT or other low noise applications.
FHC40LG
Super Low Noise HEMT
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
VDS
3.5
Gate-Source Voltage
VGS
-3.0
Total Power Dissipation
Ptot
Note
290
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Limit
Min. Typ. Max.
Saturated Drain Current
Transconductance
IDSS VDS = 2V, VGS = 0V
10 40 85
gm ^{VDS = 2V, IDS =10mA} 45 65
-
Pinch-off Voltage
Vp
VDS = 2V, IDS =1mA -0.1 _{-1.0 -2.0}
Gate Source Breakdown Voltage VGSO IGS = -10µA
-3.0 -
-
Noise Figure
Associated Gain
Thermal Resistance
NF
VDS = 2V, IDS = 10mA, ^{- 0.30 0.40}
Gas ^{f = 4GHz}
14.0 15.5 -
Rth Channel to Case
- 220 300
AVAILABLE CASE STYLES: LG
Note: RF parameters for LG devices are measured on a sample basis as follows:
Lot qty.
1200 or less
1201 to 3200
3201 to 10000
10001 or over
Sample qty.
125
200
315
500
Accept/Reject
(0,1)
(0,1)
(1,2)
(1,2)
Edition 1.1
July 1999
1
Unit
V
V
mW
°C
°C
Unit
mA
mS
V
V
dB
dB
°C/W