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ESM5832VU Datasheet, PDF (1/13 Pages) Eudyna Devices Inc – K-Band Power Amplifier MMIC | |||
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Preliminary
ES/EMM5832VU
K-Band Power Amplifier MMIC
FEATURES
ã»High Output Power: Pout=31.0dBm (typ.)
ã»High Linear Gain: GL=23.0dB (typ.)
ã»Broad Band: 21.2~26.5GHz
ã»Impedance Matched Zin/Zout=50Ω
ã»Small Hermetic Metal-Ceramic SMT Package(VU)
Device
DESCRIPTION
The EMM5832VU is a MMIC amplifier that contains a four-stage
amplifier, internally matched, for standard communications band in the
21.2 to 26.5GHz frequency range.
Eudyna Devicesâs stringent Quality Assurance Program assures the
highest reliability and consistent performance.
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ABSOLUTE MAXIMUM RATING
Item
Drain-Source Voltage
Gate-Source Voltage
Input Power
Storage Temperature
Symbol
VDD
VGG
Pin
Tstg
Rating
10
-3
22
-55 to +125
Unit
V
V
dBm
â
RECOMMENDED OPERATING CONDITIONS
Item
Symbol
Drain-Source Voltage
VDD
Input Power
Pin
Operating Case Temperature
TC
Condition
â¦7
â¦12
-40 to +85
Unit
V
dBm
â
ELECTRICAL CHARACTERISTICS (Case Temperature Ta=25â)
Item
Symbol
Test Conditions
Limits
Min. Typ. Max.
Unit
RF Frequency Range
f
VDD=+6V
21.2 - 26.5 GHz
Output Power at 1dB G.C.P.
P1dB IDD(DC)=800mA typ.
TBD 31
-
dBm
Power Gain at 1dB G.C.P.
G1dB ZS=ZL=50ohm
TBD 21 TBD dB
Power-added Efficiency at 1dB G.C.P.
Nadd
-
20
-
%
Drain Current at 1dB G.C.P.
IDDRF
- 1000 TBD mA
3rd. Order Intermodulation Distortion *
IM3 * df=+10MHz
TBD 33
-
dBc
Input Return Loss (at Pin=-20dBm)
RLIN
Po=20dBm S.C.L -
-8
-
dB
Output Return Loss (at Pin=-20dBm)
RLOUT
-
-8
-
dB
G.C.P. : Gain Compression Point
S.C.L. : Single Carrier Level
ESD
Class 0
Note : Based on EIAJ ED4701 C-111A(C=100pF, R=1.5kohm)
~199V
CASE STYLE
VU
Edition 1.0
Aug. 2005
1
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