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ESM5832VU Datasheet, PDF (1/13 Pages) Eudyna Devices Inc – K-Band Power Amplifier MMIC
Preliminary
ES/EMM5832VU
K-Band Power Amplifier MMIC
FEATURES
・High Output Power: Pout=31.0dBm (typ.)
・High Linear Gain: GL=23.0dB (typ.)
・Broad Band: 21.2~26.5GHz
・Impedance Matched Zin/Zout=50Ω
・Small Hermetic Metal-Ceramic SMT Package(VU)
Device
DESCRIPTION
The EMM5832VU is a MMIC amplifier that contains a four-stage
amplifier, internally matched, for standard communications band in the
21.2 to 26.5GHz frequency range.
Eudyna Devices’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
の写真
ABSOLUTE MAXIMUM RATING
Item
Drain-Source Voltage
Gate-Source Voltage
Input Power
Storage Temperature
Symbol
VDD
VGG
Pin
Tstg
Rating
10
-3
22
-55 to +125
Unit
V
V
dBm
℃
RECOMMENDED OPERATING CONDITIONS
Item
Symbol
Drain-Source Voltage
VDD
Input Power
Pin
Operating Case Temperature
TC
Condition
≦7
≦12
-40 to +85
Unit
V
dBm
℃
ELECTRICAL CHARACTERISTICS (Case Temperature Ta=25℃)
Item
Symbol
Test Conditions
Limits
Min. Typ. Max.
Unit
RF Frequency Range
f
VDD=+6V
21.2 - 26.5 GHz
Output Power at 1dB G.C.P.
P1dB IDD(DC)=800mA typ.
TBD 31
-
dBm
Power Gain at 1dB G.C.P.
G1dB ZS=ZL=50ohm
TBD 21 TBD dB
Power-added Efficiency at 1dB G.C.P.
Nadd
-
20
-
%
Drain Current at 1dB G.C.P.
IDDRF
- 1000 TBD mA
3rd. Order Intermodulation Distortion *
IM3 * df=+10MHz
TBD 33
-
dBc
Input Return Loss (at Pin=-20dBm)
RLIN
Po=20dBm S.C.L -
-8
-
dB
Output Return Loss (at Pin=-20dBm)
RLOUT
-
-8
-
dB
G.C.P. : Gain Compression Point
S.C.L. : Single Carrier Level
ESD
Class 0
Note : Based on EIAJ ED4701 C-111A(C=100pF, R=1.5kohm)
~199V
CASE STYLE
VU
Edition 1.0
Aug. 2005
1