EM565168 Datasheet, PDF (3/12 Pages) Etron Technology, Inc. – 512K x 16 Pseudo SRAM

EtronTech
EM565168
Operating Mode
CE1# CE2 OE# WE# LB# UB# DQ0~DQ7 DQ8~DQ15
Mode
H H X X X X High-Z
High-Z Deselect
X L X X X X High-Z
High-Z Deselect
L H X X H H High-Z
High-Z Deselect
L H H H L X High-Z
High-Z Output Disabled
L H H H X L High-Z
High-Z Output Disabled
LHLHLH
D-out
High-Z Lower Byte Read
L H L H H L High-Z
D-out Upper Byte Read
LHLHL L
D-out
D-out Word Read
LHXL LH
D-in
High-Z Lower Byte Write
L H X L H L High-Z
D-in Upper Byte Write
LHXL L L
D-in
D-in Word Write
Note: X=don’t care. H=logic high. L=logic low.
Power
Standby
Deep Power Down
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Absolute Maximum Ratings¹⁾
Supply voltage, V_CC
Input voltages, VIN
Input and output voltages, VIN, VOUT
Output short circuit current ISH
Operating temperature, TA
Storage temperature, TSTRG
Soldering Temperature (10s), TSOLDER
Power dissipation, PD
-0.2 to +3.6V
-0.2 to VCC + 0.3V
-2.0 to +3.6V*
100 mA
-25 to +85°C
-65 to +125°C
260°C
1W
Note: Absolute maximum DC requirements contains stress ratings only. Functional operation at the absolute
maximum limits is not implied or guaranteed. Extended exposure to maximum ratings may affect device
reliability.
Recommended DC Operating Conditions
Symbol
Parameter
Min.
V_CC
Power Supply Voltage
V_SS
Ground
V_IH
Input High Voltage
V_IL
Input Low Voltage
2.7
0
2.2
-0.2²⁾
Notes:
1. Overshoot: VCC + 2.0V in case of pulse width ≤ 20ns
2. Undershoot: -2.0V in case of pulse width ≤ 20ns
3. Overshoot and undershoot are sampled, not 100% tested.
Typ.
3.0
−
−
−
Max.
3.3
0
V_CC+0.2¹⁾
+0.6
Unit
V
V
V
V
3
Rev 1.0
Sep. 2003