EM562161 Datasheet, PDF (3/12 Pages) Etron Technology, Inc. – 128K x 16 Low Power SRAM

EtronTech
EM562161
Operating Mode
Mode
CE1# CE2 OE# WE# LB# UB# DQ0~DQ7 DQ8~DQ15
Read
Write
Output Deselect
Standby
LL
L
H
L
H
H
L
LH
LL
L
H
X
L
H
L
LH
L HHH X X
HXXXXX
X
L
X
X
X
X
DOUT
High-Z
DOUT
DIN
High-Z
DIN
High-Z
High-Z
DOUT
DOUT
High-Z
DIN
DIN
High-Z
High-Z
High-Z
L HXXHH
Note: X = don't care. H=logic high. L=logic low.
Power
Active
Active
Active
Active
Active
Active
Active
Standby
Absolute Maximum Ratings
Supply voltage, VDD
Input voltages, VIN
Input and output voltages, VI/O
Operating temperature, TOPR
Storage temperature, TSTRG
Soldering Temperature (10s), TSOLDER
Power dissipation, PD
-0.3 to +4.6V
-0.3 to +4.6V
-0.5 to VDD +0.5V
-40 to +85°C
-55 to +150°C
240°C
0.6 W
DC Recommended Operating Conditions (Ta=-40° C to 85° C)
Symbol
Parameter
VDD
Power Supply Voltage
VIH
Input High Voltage
VIL
Input Low Voltage
VDR
Data Retention Supply Voltage
Note:
(1) Overshoot : VDD +2.0V in case of pulse width ≤ 20ns
(2) Undershoot : -2.0V in case of pulse width ≤ 20ns
Min
2.7
2.2
-0.3⁽²⁾
1.5
Typ
Max
Unit
−
3.6
V
−
VDD + 0.3⁽¹⁾
V
−
0.6
V
−
3.6
V
Preliminary
3
Rev 1.0
July 2001