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EM68916CWQA Datasheet, PDF (11/59 Pages) Etron Technology, Inc. – 8M x 16 bit DDRII Synchronous DRAM (SDRAM)
EtronTech
EM68916CWQA
- EMR(2)
The extended mode register (2) controls refresh related features. The default value of the extended mode
register (2) is not defined, therefore the extended mode register (2) must be written after power-up for
proper operation. The extended mode register(2) is written by asserting LOW on CS#, RAS#, CAS#, WE#,
HIGH on BA1 and LOW on BA0, while controlling the states of address pins A0 ~ A12. The DDR2 SDRAM
should be in all bank precharge with CKE already HIGH prior to writing into the extended mode register (2).
The mode register set command cycle time (tMRD) must be satisfied to complete the write operation to the
extended mode register (2). Mode register contents can be changed using the same command and clock
cycle requirements during normal operation as long as all banks are in the precharge state.
Table 7. Extended Mode Resistor EMR (2) Bitmap
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Field
10
0*1
SRF
0*1
DCC*4
PASR*3
Extended Mode Register(2)
A7
High Temperature Self-Refresh Rate Enable
0
Disable
1
Enable *2
BA1 BA0 MRS mode
00
MR
0 1 EMR(1)
1 0 EMR(2)
1 1 EMR(3)
A3
DCC Enable *4
0
Disable
1
Enable
A2 A1 A0 Partial Array Self Refresh for 4 Banks
0 0 0 Full array
0 0 1 Half Array (BA[1:0]=00&01)
0 1 0 Quarter Array (BA[1:0]=00)
0 1 1 Not defined
1 0 0 3/4 array (BA[1:0]=01,10&11)
1 0 1 Half array (BA[1:0]=10&11)
1 1 0 Quarter array (BA[1:0]=11)
1 1 1 Not defined
NOTE 1: The rest bits in EMRS(2) are reserved for future use and all bits in EMRS(2) except A0-A2, A7, BA0 and BA1
must be programmed to 0 when setting the extended mode register(2) during initialization.
NOTE 2: Due to the migration nature, user needs to ensure the DRAM part supports higher than 85℃ Tcase temperature
self-refresh entry. If the high temperature self-refresh mode is supported then controller can set the EMRS2[A7] bit
to enable the self-refresh rate in case of higher than 85℃ temperature self-refresh operation.
NOTE 3: If PASR (Partial Array Self Refresh) is enabled, data located in areas of the array beyond the specified location
will be lost if self refresh is entered. Data integrity will be maintained if tREF conditions are met and no Self Refresh
command is issued.
NOTE 4: DCC (Duty Cycle Corrector) implemented, user may be given the controllability of DCC thru EMR (2) [A3] bit.
Etron Confidential
11
Rev. 1.1
Apr. 2009