EM6GC16EWKE-15H Datasheet, PDF (1/85 Pages) Etron Technology, Inc. – 64M x 16 bit DDR3 Synchronous DRAM (SDRAM)

EtronTech
EM6GC16EWKE
64M x 16 bit DDR3 Synchronous DRAM (SDRAM)
Advance (Rev. 1.0, Jul. /2015)
Features
• ^{JEDEC Standard Compliant}
• ^{Power supplies: V}DD ^{& V}DDQ ^{= +1.5V ± 0.075V}
• ^{Operating temperature: 0~95°C (TC)}
• ^{Supports JEDEC clock jitter specification}
• ^{Fully synchronous operation}
• ^{Fast clock rate: 667/800/933MHz}
• ^{Differential Clock, CK & CK#}
• ^{Bidirectional differential data strobe}
- DQS & DQS#
• ^{8 internal banks for concurrent operation}
• ^{8n-bit prefetch architecture}
• ^{Pipelined internal architecture}
• ^{Precharge & active power down}
• ^{Programmable Mode & Extended Mode registers}
• ^{Additive Latency (AL): 0, CL-1, CL-2}
• ^{Programmable Burst lengths: 4, 8}
• ^{Burst type: Sequential / Interleave}
• Output Driver Impedance Control
• 8192 refresh cycles / 64ms
- Average refresh period
7.8µs @ 0°C ÙTCÙ +85°C

3.9µs @ +85°C ÖTCÙ +95°C
• Write Leveling
• ZQ Calibration
• Dynamic ODT (Rtt_Nom & Rtt_WR)
• ^{RoHS compliant}
• ^{Auto Refresh and Self Refresh}
• ^{96-ball 8 x 13 x 1.0mm FBGA package}
- Pb and Halogen Free
Overview
The 1Gb Double-Data-Rate-3 DRAMs is double data
rate architecture to achieve high-speed operation. It is
internally configured as an eight bank DRAM.
The 1Gb chip is organized as 8Mbit x 16 I/Os x 8
bank devices. These synchronous devices achieve
high speed double-data-rate transfer rates of up to
1866 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3
DRAM key features and all of the control and address
inputs are synchronized with a pair of externally
supplied differential clocks. Inputs are latched at the
cross point of differential clocks (CK rising and CK#
falling). All I/Os are synchronized with differential DQS
pair in a source synchronous fashion.
These devices operate with a single 1.5V ± 0.075V
power supply and are available in BGA packages.
Table 1. Ordering Information
Part Number
Clock Frequency
EM6GC16EWKE-15H
667MHz
EM6GC16EWKE-12H
800MHz
EM6GC16EWKE-10H
933MHz
WK: indicates 8 x 13 x 1.0mm FBGA package
E: indicates Generation Code
H: indicates Pb and Halogen Free
Data Rate
1333Mbps/pin
1600Mbps/pin
1866Mbps/pin
Power Supply
VDD 1.5V, VDDQ 1.5V
VDD 1.5V, VDDQ 1.5V
VDD 1.5V, VDDQ 1.5V
Package
FBGA
FBGA
FBGA
Table 2. Speed Grade Information
Speed Grade
Clock Frequency
DDR3-1333
DDR3-1600
DDR3-1866
667MHz
800MHz
933MHz
CAS Latency
9
11
13
t_RCD (ns)
13.5
13.75
13.91
t_RP (ns)
13.5
13.75
13.91
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: [phone] FAX: [phone]
Etron Technology, Inc. reserves the right to change products or specification without notice.