EM6AA320-XXMS Datasheet, PDF (1/16 Pages) Etron Technology, Inc. – 8M x 32 DDR SDRAM

EtronTech
Features
EM6AA320-XXMS
8M x 32 DDR SDRAM
(Rev 0.7 May/2006)
Overview
• Fast clock rate: 300/275/250/200/166 MHz
• Differential Clock CK & CK# input
• 4 Bi-directional DQS. Data transactions on both
edges of DQS (1DQS / Byte)
• DLL aligns DQ and DQS transitions
• Edge aligned data & DQS output
• Center aligned data & DQS input
• 4 banks operation
• Programmable mode and extended mode
registers
- CAS# Latency: 3, 4
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleave
• Full page burst length for sequential type only
• Start address of full page burst should be even
• All inputs except DQ’s & DM are at the positive
edge of the system clock
• No Write-Interrupted by Read function
• 4 individual DM control for write masking only
• Auto Refresh and Self Refresh
• 4096 refresh cycles / 32ms
• Power supplies :
VDD = 2.5V ± 5%
VDDQ = 2.5V ± 5%
• Interface : SSTL_2 I/O compatible
• ^{Standard 144-ball FBGA package}
• ^{Pb-free package is available}
The EM6AA320 DDR SDRAM is a high-speed CMOS
double data rate synchronous DRAM containing 256
Mbits. It is internally configured as a quad 2M x 32
DRAM with a synchronous interface (all signals are
registered on the positive edge of the clock signal, CK).
Data outputs occur at both rising edges of CK and CK#.
Read and write accesses to the SDRAM are burst
oriented; accesses start at a selected location and
continue for a programmed number of locations in a
programmed sequence.
Accesses begin with the registration of a BankActivate
command, which is then followed by a Read or Write
command.
The EM6AA320 provides programmable Read or Write
burst lengths of 2, 4, 8. An auto precharge function may
be enabled to provide a self-timed row precharge that is
initiated at the end of the burst sequence.
The refresh functions, either Auto or Self Refresh are
easy to use.
In addition, EM6AA320 features programmable DLL
option. By having a programmable mode register and
extended mode register, the system can choose the
most suitable modes to maximize its performance.
These devices are well suited for applications requiring
high memory bandwidth, result in a device particularly
well suited to high performance main memory and
graphics applications.
Ordering Information
Part Number
Frequency
EM6AA320BI-3.3MS^(*)
300MHz
EM6AA320BI-3.6MS^(*)
275MHz
EM6AA320BI-4MS/4MSG^(*) 250MHz
EM6AA320BI-5MS/5MSG^(*) 200MHz
EM6AA320BI-6MS/6MSG^(*) 166MHz
Note (*) : S indicates stacked die package
G indicates Pb-free package
Power Supply
VDD 2.5V
VDDQ 2.5V
Package
FBGA
FBGA
FBGA
FBGA
FBGA