EM6AA160TSC-4G Datasheet, PDF (1/63 Pages) Etron Technology, Inc. – 16M x 16 bit DDR Synchronous DRAM (SDRAM)

EtronTech
EM6AA160
Etron Confidential
16M x 16 bit DDR Synchronous DRAM (SDRAM)
Preliminary (Rev. 1.3, Mar. /2014)
Features
• ^{Fast clock rate: 250/200MHz}
• ^{Differential Clock CK &} CK
• ^{Bi-directional DQS}
• ^{DLL enable/disable by EMRS}
• ^{Fully synchronous operation}
• ^{Internal pipeline architecture}
• ^{Four internal banks, 4M x 16-bit for each bank}
• ^{Programmable Mode and Extended Mode registers}
- CAS Latency: 2, 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
• ^{Individual byte write mask control}
• ^{DM Write Latency = 0}
• ^{Auto Refresh and Self Refresh}
• ^{8192 refresh cycles / 64ms}
• ^{Precharge & active power down}
• ^{Power supplies: V}DD & ^VDDQ ^{= 2.5V ± 0.2V}
• ^{Interface: SSTL_2 I/O Interface}
• ^{Package: 66 Pin TSOP II, 0.65mm pin pitch}
- Pb free and Halogen free
• ^{Package: 60-Ball, 8x13x1.2 mm (max) TFBGA}
- Pb free and Halogen Free
Overview
The EM6AA160 SDRAM is a high-speed CMOS
double data rate synchronous DRAM containing 256
Mbits. It is internally configured as a quad 4M x 16
DRAM with a synchronous interface (all signals are
registered on the positive edge of the clock signal,
CK). Data outputs occur at both rising edges of CK
and _CK . Read and write accesses to the SDRAM
are burst oriented; accesses start at a selected
location and continue for a programmed number of
locations in a programmed sequence. Accesses
begin with the registration of a BankActivate
command which is then followed by a Read or Write
command. The EM6AA160 provides programmable
Read or Write burst lengths of 2, 4, or 8. An auto
precharge function may be enabled to provide a self-
timed row precharge that is initiated at the end of the
burst sequence. The refresh functions, either Auto or
Self Refresh are easy to use. In addition, EM6AA160
features programmable DLL option. By having a
programmable mode register and extended mode
register, the system can choose the most suitable
modes to maximize its performance. These devices
are well suited for applications requiring high
memory bandwidth, result in a device particularly
well suited to high performance main memory and
graphics applications.
Table 1. Ordering Information
Part Number
Clock Frequency Data Rate
EM6AA160TSC-4G
250MHz
500Mbps/pin
EM6AA160TSC-5G
200MHz
400Mbps/pin
EM6AA160BKC-4H
250MHz
500Mbps/pin
EM6AA160BKC-5H
200MHz
400Mbps/pin
TS: indicates TSOP II Package
BK: indicates TFBGA Package
C: indicates Generation Code
G: indicates Pb free and Halogen Free for TSOPII Package
H: indicates Pb free and Halogen Free for TFBGA Package
Package
TSOPII
TSOPII
TFBGA
TFBGA
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: [phone] FAX: [phone]
Etron Technology, Inc. reserves the right to change products or specification without notice.